Simone Gerardin received the Laurea degree (cum laude) in Electronics Engineering in 2003, and a Ph.D. in Electronics and Telecommunications Engineering in 2007, both from the University of Padova – Italy, where he is now an Associate Professor of Electronics. In 2020 he obtained the habilitation to full professorship.

His research has been focused on soft and hard errors induced by ionizing radiation in advanced electronic technologies, and on their interplay with device aging and electrostatic discharges. During his research career, he worked on several technologies and devices, ranging from deep-submicron MOSFETs, FinFETs, tunnel FETs and GaN HEMTs to microprocessors and Field Programmable Gate Arrays (FPGA). In recent years, he has been focusing on Non-Volatile Memories (NVM, including floating gate cells with 3D architecture, charge trap, resistive, and phase-change technologies) and ultra-high dose effects in MOSFETs for high-energy physics experiments.

He took part in several Italian and European projects and collaborated with space agencies (ESA-ESTEC, NASA-JPL, and ASI), research institutions (CERN, RAL, IMEC, INFN), universities, and semiconductor and space companies (STMicroelectronics, Numonyx, Micron, Actel, Thales Alenia Space), both in Europe and in the USA.

He has authored or co-authored more than one hundred papers published in international peer-reviewed journals and more than 100 conference presentations, with more than ten of winning awards at the RADiation and its Effects on Components and Systems (RADECS) and the Nuclear Space Radiation Effects Conference (NSREC). He also wrote three book chapters and coedited a book in 2016 about radiation effects in electronics devices edited by CRC Press.

He presented seminars and invited talks about his research activities to universities, research institutions, and companies in the USA, China, Brazil, and across Europe.  He has been session chair at RADECS, at NSREC, and at the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF). He co-organized a thematic workshop on NVMs at RADECS 2010. He has been a short course instructor at RADECS 2009, NSREC 2010, RADECS 2015, illustrating basic mechanisms of radiation effects, non-volatile memories for space, and new effects in advanced components, respectively.  He has been the short course chair for NSREC 2018, the technical program chair for NSREC 2019, and the general chair for RADECS 2022. From to 2014 to 2017 he has been member-at-large of the IEEE NPSS radiation effects steering group. From

2010 to 2018 he has been an associate editor for the IEEE Transactions on Nuclear Science, and he has been a guest editor for Semiconductor Science Technology in 2015.